technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/603 7t4-lds-0122 rev. 2 (101017) page 1 of 5 devices levels 2N7269 2N7269u jansr (100k rad(si)) jansf (300k rad(si)) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain C source voltage v ds 200 vdc gate C source voltage v gs 20 vdc continuous drain current t c = +25c i d1 26.0 adc continuous drain current t c = +100c i d2 16.0 adc max. power dissipation p tl 150 (1) w drain to source on state resistance r ds(on) 0.100 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 1.2 w/c for t c > +25c (2) v gs = 12vdc, i d = 16.0a pre-irradiation electri cal characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 1.0ma v ds v gs , i d = 1.0ma, t j = +125c v ds v gs , i d = 1.0ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 160v v gs = 0v, v ds = 200v, t j = +125c v gs = 0v, v ds = 160v, t j = +125c i dss1 i dss2 i dss3 25 1.0 0.25 adc madc madc static drain-source on-state resistance v gs = 12v, i d = 16.0a pulsed v gs = 12v, i d = 26.0a pulsed t j = +125c v gs = 12v, i d = 16.0a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.100 0.110 0.200 diode forward voltage v gs = 0v, i d = 26.0a pulsed v sd 1.4 vdc to-254aa jansr2N7269, jansf2N7269 see figure 1 u-pkg (smd-1) (to-267ab) jansr2N7269u, jansf2N7269u see figure 2 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/603 7t4-lds-0122 rev. 2 (101017) page 2 of 5 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = 12v, i d = 26.0a v ds = 100v q g(on) q gs q gd 170 30 60 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 26.0a, v gs = 12vdc, gate drive impedance = 2.35 , v dd = 50vdc t d(on) t r t d(off) t f 33 140 140 140 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i f = 26.0a t rr 820 ns post-irradiation electrical characteristics (3) (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 1.0ma msr v ds v gs , i d = 1.0ma msf v gs(th)1 v gs(th)1 2.0 1.25 4.0 4.5 vdc gate current v gs = 20v, v ds = 0v i gss1 100 nadc drain current v gs = 0v, v ds = 160v msr v gs = 0v, v ds = 160v msf i dss1 25 50 adc static drain-source on-state voltage v gs = 12v, i d = 16.0a pulsed msr v gs = 12v, i d = 16.0a pulsed msf v ds(on) 1.6 2.48 vdc diode forward voltage v gs = 0v, i d = 26.0a pulsed v sd 1.4 vdc note: (3) post-irradiation electrical characteristics apply to devices subjected to steady st ate total dose irradiation testing in accordance with mil- std-750 method 1019. separa te samples are tested for vg s bias (12v), and vds bias (160v) conditions. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/603 7t4-lds-0122 rev. 2 (101017) page 3 of 5 single event effect (see) characteristics: heavy ion testing of the 2N7269 device was completed by similarity of die structure to the 2n7262. the 2n7262 has been characterized at th e texas a&m cyclotron. the follo wing soa curve has been established using the elements, let, range, and total energy conditions as shown: 2N7269 (2n7262) 0 20 40 60 80 100 120 140 160 180 200 220 -25 -20 -15 -10 -5 0 gate bias, v drain bias, v tamu ar let=8.3 range =192um total energy=531mev tamu kr let=27.8 range =134um total energy=1032mev tamu ag let=42.2 range =119um total energy=1289mev tamu au let=85.4 range =118um total energy=2247mev it should be noted that total energy le vels are considered to be a factor in see characterization. comparisons to other datasets should not be based on let alone. please consult factory for more information. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/603 7t4-lds-0122 rev. 2 (101017) page 4 of 5 figure 1: case outline and pin conf iguration for jansr2N7269 & jansf2N7269 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened n-channel mosfet reference mil-prf-19500/603 7t4-lds-0122 rev. 2 (101017) page 5 of 5 notes: dimensions 1. dimensions are in inches. symbol smd-1 2. millimeters are given for general information only. inches millimeters 3. the lid shall be electrically isolated from the drain, gate and min max min max source. bl .620 .630 15.75 16.00 4. in accordance with asme y14.5m, diameters are equivalent to bw .445 .455 11.30 11.56 x symbology. ch .142 3.60 lh .010 .020 0.26 0.50 ll 1 .410 .420 10.41 10.67 ll 2 .152 .162 3.86 4.11 ls 1 .210 bsc 5.33 bsc ls 2 .105 bsc 2.67 bsc lw 1 .370 .380 9.40 9.65 lw 2 .135 .145 3.43 3.68 q 1 .030 0.76 q 2 .035 0.89 term 1 drain term 2 gate term 3 source figure 2: case outline and pin conf iguration for jansr2N7269u & jansf2N7269u downloaded from: http:///
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